Band gap profiles of intrinsic amorphous silicon germanium films and their application to amorphous silicon germanium heterojunction solar cells |
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| Affiliation: | 1. Key Laboratory of Solar Thermal Energy and Photovoltaic System of Chinese Academy of Sciences, Institute of Electrical Engineering, The Chinese Academy of Sciences, Beijing 100190, China;2. Information and Post & Telecommunications Industry Products Quality Surveillance & Inspection Center, China Telecommunication Technology Labs, China Academy of Research of MIIT, Beijing 100015, China;3. Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China;1. Key Laboratory of Solar Thermal Energy and Photovoltaic System of Chinese Academy of Sciences, Institute of Electrical Engineering, The Chinese Academy of Sciences, Beijing 100190, PR China;2. University of Chinese Academy of Sciences, Beijing 100049, PR China;3. China Telecommunication Technology Labs, China Academy of Information and Communications Technology (formerly China Academy of Telecommunication Research of MIIT), Beijing 100015, PR China |
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| Abstract: | Intrinsic amorphous silicon germanium (i-a-SiGe:H) films with V, U and VU shape band gap profiles for amorphous silicon germanium (a-SiGe:H) heterojunction solar cells were fabricated. The band gap profiles of i-a-SiGe:H were prepared by varying the GeH4 and H2 flow rates during the deposition process. The use of i-a-SiGe:H with band gap profile in an absorber layer for a-SiGe:H heterojunction solar cells was investigated. The solar cell using a VU shape band gap profile shows a higher efficiency compared to other shapes. The highest efficiency obtained for an a-SiGe:H heterojunction solar cell using the VU shape band gap profile technique was 9.4% (Voc = 0.79 V, Jsc = 19.0 mA/cm2 and FF = 0.63). |
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| Keywords: | Amorphous germanium silicon Band gap profile Amorphous germanium silicon heterojunction solar cell |
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