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Influence of electron beam irradiation on nonlinear optical properties of Al doped ZnO thin films for optoelectronic device applications in the cw laser regime
Affiliation:1. Nonlinear Optics Research Laboratory, Department of Physics, Manipal Institute of Technology, Manipal University, Manipal, Karnataka, 576104, India;2. Department of Physics, School of Engineering and Technology, Jain University, Bangalore, Karnataka, 562112, India;3. Electrical Engineering Department, Czestochowa University Technology, Czestochowa, Poland;4. Department of Inorganic and Organic Chemistry, Lviv National University of Veterinary Medicine and Biotechnologies, Pekarska St., 50, Lviv, 79010, Ukraine;5. Mircortron Center, Department of Physics, Mangalore University, Mangalore, Karnataka, 574199, India;1. Faculty of Technical Physics, Poznan University of Technology, Piotrowo 3, 60-965 Poznań, Poland;2. Institute of Applied Physics, Military University of Technology, Kaliskiego 2, 00-908 Warsaw, Poland;3. Institute of Low Temperature and Structure Research of Polish Academy of Sciences, Okólna 2, 50-422 Wroclaw, Poland;4. NanoBioMedical Centre, Adam Mickiewicz University, Umultowska 85, 61-614 Poznań, Poland;5. Faculty of Physics, Adam Mickiewicz University, Umultowska 85, 61-614 Poznań, Poland;6. Faculty of Chemistry, Adam Mickiewicz University, Umultowska 89b, 61-614 Poznań, Poland;1. Key Laboratory of Optoelectronic Materials Chemistry and Physics of CAS, Fujian Institute of Research on the Structure of Matter, CAS, Fuzhou, Fujian 350002, China;2. University of Chinese Academy of Sciences, Beijing 100039, China;1. Advanced Functional Materials & Optoelectronic Laboratory (AFMOL), Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha, Saudi Arabia;2. Nano-Science & Semiconductor Labs, Metallurgical Lab., Physics Department, Faculty of Education, Ain Shams University, Roxy, Cairo, Egypt;1. Department of Physics, School of Engineering and Technology, Surya Group of Institutions, Vikravandi, Villupuram 605652, Tamilnadu, India;2. Department of Physics, University College of Engineering Villupuram, (A Constituent College of Anna University), Kakuppam, Villupuram 605103, Tamilnadu, India;1. Centre of Nanotechnology, King Abdulaziz University, Jeddah, Saudi Arabia;2. Department of Physics, Sciences Faculty for Girles, King Abdulaziz University, Jeddah, Saudi Arabia;3. Department of Physics, Faculty of Science, King Khalid University, PO Box 9004, Abha, Saudi Arabia;4. Nano-Science & Semiconductor Labs, Department of Physics, Faculty of Education, Ain Shams University, Roxy, 11757 Cairo, Egypt;1. St. Joseph''s College of Engineering and Technology, Elupatti, Thanjavur, India;2. Department of Physics, Government Arts College, Tiruchirappalli, India;3. PG and Research Department of Physics, Arul Anandar College, Karumathur, Madurai, India;4. Advanced Functional materials&Optoelectronic laboratory (AFMOL), Department of Physics, College of Science, King Khalid University, P.O. Box 9004, Abha 61413, Saudi Arabia
Abstract:We present the studies on third-order nonlinear optical properties of Al doped ZnO thin films irradiated with electron beam at different dose rate. Al doped ZnO thin films were deposited on a glass substrate by spray pyrolysis deposition technique. The thin films were irradiated using the 8 MeV electron beam from microtron ranging from 1  kG y to 5  kG y. Nonlinear optical studies were carried out by employing the single beam Z-scan technique to determine the sign and magnitude of absorptive and refractive nonlinearities of the irradiated thin films. Continuous wave He–Ne laser operating at 633 nm was used as source of excitation. The open aperture Z-scan measurements indicated the sample displays reverse saturable absorption (RSA) process. The negative sign of the nonlinear refractive index n2 was noted from the closed aperture Z-scan measurements indicates, the films exhibit self-defocusing property due to thermal nonlinearity. The third-order nonlinear optical susceptibility χ(3) varies from 8.17 × 10?5 esu to 1.39 × 10?3 esu with increase in electron beam irradiation. The present study reveals that the irradiation of electron beam leads to significant changes in the third-order optical nonlinearity. Al doped ZnO displays good optical power handling capability with optical clamping of about ~5 mW. The irradiation study endorses that the Al doped ZnO under investigation is a promising candidate photonic device applications such as all-optical power limiting.
Keywords:AZO thin films  Z-scan  Electron beam  NLO  Optical limiting
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