A CMOS compatible lateral emitter switched thyristor with enhancedturn-on capability |
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Authors: | Chen W Amaratunga GAJ Narayanan EMS Humphrey J Evans AGR |
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Affiliation: | Dept. of Eng., Cambridge Univ.; |
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Abstract: | A new Lateral Emitter Switched Thyristor structure (LEST) is proposed and experimentally verified. The structure differs from the conventional LEST in that it embeds a floating ohmic contact between the n- drift region and the n+ floating emitter. Both simulation and experimental results show that the device has an enhanced turn-on capability compared with the conventional LEST without deteriorating its other characteristics. The device is fabricated using a 3 μm CMOS process to have a 320 V breakdown voltage and a 0.7 V threshold voltage. Thyristor turn-on is observed at an anode voltage below 2 V. The maximum MOS controllable current density is in excess of 200 A/cm2 with 5 V gate voltage |
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