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A High Power Semiconductor Switch RSD for Pulsed Power Applications
作者姓名:周郁明  余邱辉  陈海刚  梁琳
作者单位:[1]College of Physics and Microelectronic, Hunan University, Changsha 410082, China [2]Department of Electronic Science and Technology, Huazhong University of Science and Technology, Wuhan 430074, China
基金项目:supported by the National Natural Science Foundation of China (Nos. 50277016, 50577028) and Specialized Research Fund for the Doctoral Program of Higher Education (No. 20050487044)
摘    要:High power switch is one of the most important components in pulsed power technology. The RSD (Reversely Switched Dynistor), turned on by a thin layer of an electron-hole plasma, is a high power semiconductor switch. In this study, the RSD turn-on conditions were investigated by numerical analysis and device simulation as well as the experiments conducted to validate the turn-on conditions. A design of a triggering high-voltage RSD is presented based on a saturable transformer.

关 键 词:脉冲功率  半导体开关  触发器  变压器  反向开关负阻半导体
修稿时间:2006-06-19

A High Power Semiconductor Switch RSD for Pulsed Power Applications
ZHOU Yuming , YU Yuehui , CHEN Haigang , LIANG Lin.A High Power Semiconductor Switch RSD for Pulsed Power Applications[J].Plasma Science & Technology,2007,9(5):622-625.
Authors:ZHOU Yuming  YU Yuehui  CHEN Haigang  LIANG Lin
Affiliation:1 College of Physics and Microelectronic, Hunan University, Changsha 410082, China 2 Department of Electronic Science and Technology, Huazhong University of Science and Technology, Wuhan 430074, China
Abstract:
Keywords:pulsed power  semiconductor switch  RSD  trigger charge  saturable transformer
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