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Effect of N2-Gas Partial Pressure on the Structure and Properties of Copper Nitride Films by DC Reactive Magnetron Sputtering
Affiliation:1.Department of Physics, Huazhong University of Science and Technology, Wuhan 430074, China; 2. Department of Physics, Hubei Institute for Nationalities, Enshi 445000, China
Abstract:Cu3N film, DC magnetron sputtering, N2-gas partial pressure, resistivity
Keywords:Cu3N film   DC magnetron sputtering   N2-gas partial pressure   resistivity
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