| 镓铟砷／铝铟砷 QWLD中俄歇复合及其对T0的影响 |
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| 引用本文： | 朴海镇,陈辰嘉.镓铟砷／铝铟砷 QWLD中俄歇复合及其对T0的影响[J].半导体光电,1998,19(6):356-361. |
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| 作者姓名： | 朴海镇 陈辰嘉 |
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| 作者单位： | 北京大学 |
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| 摘 要： | 修正了现行俄歇复合率的公式，并用之分析了晶格匹配ＧａＩｎＡｓ／ＡｌＩｎＡｓ异质材料系统在有无量子尺寸效应情况下的俄歇复合随载流子浓度和温度变化的行为。发现其阈值电流密度随温度的变化行为可分为特征温度不同的相邻两个温区，在较高温区，量子尺寸效应作用不大，在较低温区，量子尺寸效应反而降低了Ｔ０，并对此意外的现象提出初步的解释。
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| 关 键 词： | 半导体 量子阱 激光器 俄歇复合 特征温度 |
Auger recombination in GaInAs/AlInAs QW laser and its effect on T 0 |
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| PIAO Haizhen CHEN Chenjia GUO Changzhi.Auger recombination in GaInAs/AlInAs QW laser and its effect on T 0[J].Semiconductor Optoelectronics,1998,19(6):356-361. |
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| Authors: | PIAO Haizhen CHEN Chenjia GUO Changzhi |
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| Abstract: | The existent Auger recombination formula has been corrected which has been used for calculating the behavior of Auger recombination rate in the lattice-matched GaInAs/AlInAs he-terostructure material system as a function of the carrier density and temperature.It is found that the variation of threshold current with temperature can be divided into two consecutive regions with different T 0.In the higher temperature region the quantum size effect is not so significant,whereas in lower temperature region it reduces T 0.A preliminary explanation for these unexpected phenomena is given. |
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| Keywords: | Semiconductor QW Laser Auger Recombination Characteristic Temperature |
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