| 非对称线性缓变结击穿电压的解析计算 |
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| 引用本文： | 何进,张兴,黄如. 非对称线性缓变结击穿电压的解析计算[J]. 微纳电子技术, 2000, 0(4) |
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| 作者姓名： | 何进 张兴 黄如 |
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| 作者单位： | 北京大学微电子所!北京100871 |
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| 摘 要： | 通过有效掺杂浓度梯度的定义和耗尽近似求解 ,得到非对称线性缓变结击穿电压的简洁表达式。借助计算的有效掺杂浓度梯度和双边对称线性结击穿电压公式 ,可以方便地计算出非对称线性结的击穿电压。
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| 关 键 词： | 非对称线性缓变结 击穿电压 有效掺杂浓度梯度 |
Solution for Breakdown Voltage for Asymmetric Linearly Graded Junction |
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| He Jin,Zhang Xing,Huang Ru. Solution for Breakdown Voltage for Asymmetric Linearly Graded Junction[J]. Micronanoelectronic Technology, 2000, 0(4) |
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| Authors: | He Jin Zhang Xing Huang Ru |
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| Abstract: | By using the definition of effective doping concentration gradient and depletion approximation,an analytical solution for avalanche breakdown voltage of double sided asymmetric linearly graded junction has been derived.Meanwhile,the analytical expression of the breakdown voltage of the single sided linearly graded junction has also been obtained. |
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| Keywords: | Asymmetric linearly graded junction Breakdown voltage Effective doping concentration gradient |
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