Influence of a Ni interlayer on the optical and electrical properties of trilayer GZO/Ni/GZO films |
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| Affiliation: | 1. School of Materials Science and Engineering, University of Ulsan, Ulsan 680-749, Republic of Korea;2. Korea Institute of Industrial Technology(KITECH), Yangsan 626-821, Republic of Korea;1. Department of Physics Yeungnam University, 214-1 Dae-dong, Gyeongsan 712-749, Korea;2. Department of Chemistry Yeungnam University, 214-1 Dae-dong, Gyeongsan 712-749, Korea;1. Department of Biomedical Engineering, Columbia University, New York, New York;1. Department of Chemical Engineering, University of Massachusetts, Amherst, Massachusetts |
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| Abstract: | Trilayer GZO/Ni/GZO films were deposited onto polycarbonate (PC) substrates with RF and DC magnetron sputtering, and then the influence of a Ni interlayer on the optical and electrical properties of the films was investigated. A 2-nm-thick Ni interlayer decreased the resistivity to 6.4×10?4 Ω cm and influenced the optical transmittance.Although optical transmittance deteriorated with Ni insertion, the films showed a relatively high optical transmittance of 74.5% in the visible wavelength region. The figure of merit (FOM) of a GZO single layer film was 1.2×10?4 Ω?1, while that of the GZO/Ni/GZO films reached a maximum of 8.2×10?4 Ω?1.Since a higher FOM results in higher quality transparent-conductive oxide (TCO) films, it is concluded that GZO films with a 2 nm Ni interlayer have better optoelectrical performance than single-layer GZO films. |
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| Keywords: | GZO Ni Poly-carbonate Surface roughness Figure of merit |
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