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Tuning the microwave dielectric properties of Zn2SnO4 ceramics by adding Ca0.8Sr0.2TiO3
Affiliation:1. Center of Investigation in Engineering and Applied Sciences of the Autonomous University of the State of Morelos (CIICAp-UAEM), Av. Universidad, 1001 Cuernavaca, Mexico;2. Institute for Problems of Materials Science, National Academy of Sciences of Ukraine, 3, Krzhyzhanovsky St., Kiev 252680, Ukraine;1. Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, PR China;2. College of Materials Science and Engineering, Chongqing University of Technology, Chongqing 400054, PR China;1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;2. Institute of Electronic and Information Engineering, University of Electronic Science and Technology of China, Dongguan 518105, China
Abstract:The influence of sintering temperature on the microwave dielectric properties and microstructure of the (1−y)Zn2SnO4yCa0.8Sr0.2TiO3 ceramic system were investigated with a view to their application in microwave devices. A (1−y)Zn2SnO4yCa0.8Sr0.2TiO3 ceramic system was prepared by the conventional solid-state method. The X-ray diffraction patterns of the 0.85Zn2SnO4–0.15Ca0.8Sr0.2TiO3 ceramic system did not significantly vary with sintering temperature. A dielectric constant of 9.6, a quality factor (Q×f) of 15,900 GHz, and a temperature coefficient of resonant frequency of −4 ppm/°C were obtained when the 0.85Zn2SnO4–0.15Ca0.8Sr0.2TiO3 ceramic system was sintered at 1175 °C for 4 h.
Keywords:Ceramics  Dielectric constant  Quality factor  Temperature coefficient of resonant frequency
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