Synthesis and dielectric anomalies of CdCu3Ti4O12 ceramics |
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| Affiliation: | 1. Institute for Materials Research, School of Chemical and Process Engineering, University of Leeds, Leeds, LS2 9JT, UK;2. Department of Physics, Islamia College Peshawar, KP, Pakistan;1. Faculty of Materials Science and Chemical Engineering, Ningbo University, No. 818 Fenghua Road, Jiangbei District, Ningbo 315211, People''s Republic of China;2. Institute of Advanced Electrochemical Energy, Xi''an University of Technology, Xi''an 710048, People''s Republic of China;3. Zhejiang Chiwee Chuangyuan Industry Co., Ltd., Changxing 313199, People''s Republic of China;1. State Key Laboratory of Electrical Insulation and Power Equipment, Xi’an Jiaotong University, Xi’an 710049, PR China;2. State Key Laboratory of Power Transmission Equipment & System Security and New Technology, Chongqing University, Chongqing 400044, PR China;1. Department of Physics, Faculty of Science, Khon Kaen University, Khon Kaen 40002, Thailand;2. Integrated Nanotechnology Research Center (INRC), Khon Kaen University, Khon Kaen 40002, Thailand;3. Materials Science and Nanotechnology Program, Faculty of Science, Khon Kaen University, Khon Kaen 40002, Thailand;4. National Metal and Materials Technology Center (MTEC), Thailand Science Park, Pathumthani 12120, Thailand;5. School of Physics, Institute of Science, Suranaree University of Technology, Nakhon Ratchasima 30000, Thailand;1. Department of Applied Physics, Xi׳an University of Technology, Xi׳an 710054, People׳s Republic of China;2. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100190, People׳s Republic of China |
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| Abstract: | CdCu3Ti4O12 ceramics were successfully synthetized by the conventional solid-state reaction method. The influences of sintering parameters on phase structure, microstructure and dielectric properties were investigated systematically. CdCu3Ti4O12 ceramics sintered at 1020 °C for 15 h exhibited high temperature stability and outstanding dielectric properties, evidenced by the △CT/C25 °C ranges from −14.8% to 12.1% measured from −55 to 125 °C at 1 kHz, and the giant dielectric constant ε′=2.4×104 as well as dielectric loss tanδ=0.072. Four dielectric anomalies were evidenced in dielectric temperature spectra and the related physical mechanisms were discussed in detail. The oxygen vacancies play an important role in dielectric anomalies in the high temperature range. |
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| Keywords: | Dielectric anomalies Oxygen vacancies |
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