Impedance spectroscopic investigation on electrical conduction and relaxation in manganese substituted pyrochlore type semiconducting oxides |
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| Affiliation: | 1. V. V. Voevodsky Institute of Chemical Kinetics and Combustion, Siberian Branch of the Russian Academy of Sciences, 630090 Novosibirsk, Russian Federation;2. Novosibirsk State University, 630090 Novosibirsk, Russian Federation;3. N. N. Vorozhtsov Novosibirsk Institute of Organic Chemistry, Siberian Branch of the Russian Academy of Sciences, 630090 Novosibirsk, Russian Federation;4. Novosibirsk State Technical University, 630073 Novosibirsk, Russian Federation;5. A. V. Nikolaev Institute of Inorganic Chemistry, Siberian Branch of the Russian Academy of Sciences, 630090 Novosibirsk, Russian Federation;1. Université de Carthage, Faculté des Sciences de Bizerte, UR11ES30, Synthèse et Structures de Nanomatériaux, 7021 Jarzouna, Tunisia;2. Université de Toulouse, LPCNO, INSA CNRS UMR 5215, 135 av. de Rangueil, 31077 Toulouse Cedex 4, France;3. Northern Borders University, College of Sciences, Arar, Saudi Arabia;4. Université de Tunis el Manar, Faculté des Sciences de Tunis, Campus Universitaire, 2092, El Manar, Tunis;1. Institute of Physics, University of Silesia, ul. Uniwersytecka 4, 40-007 Katowice, Poland;2. Institute of Electronic Materials Technology, ul. Wólczyńska 133, 01-919 Warszawa, Poland;1. Alexandru Ioan Cuza University of Iasi, Interdisciplinary Research Department and RAMTECH, Blvd. Carol I, Nr. 11, 700506 Iasi, Romania;2. Gheorghe Asachi Technical University of Iasi, Faculty of Automatic Control and Computer Science, Str. Dimitrie Mangeron, Nr. 27, 700050 Iasi, Romania |
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| Abstract: | The effect of simultaneous substitutions of Mn in both A and B sites of the pyrochlore type semiconducting oxides: (CaCe1−2xMn2x)(Sn1−xMnxINb)O7−δ (x=0, 0.1, 0.2, 0.3 and 0.4) on the electrical conduction and relaxation was studied in detail using impedance analysis as a function of frequency over a wide range of temperature. Impedance and modulus analysis clearly explain the relaxation in these materials and its dependence on Mn concentration. Grain boundary dominant electrical characteristics have been observed with progressive Mn substitution. Correlated barrier hopping model was successfully applied for explaining the conduction mechanism in these compounds. Variation of hopping parameters with Mn substitution in these materials indicates strong dependence on the grain and grain boundary contributions. This insight to the conduction mechanism of the system offers in tuning the electrical properties for desired applications such as NTC thermistors. |
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| Keywords: | Impedance Electrical conductivity Electrical properties |
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