Dielectric engineering of Ge nanocrystal/SiO2 nanocomposite thin films with Ge ion implantation: Modeling and measurement |
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| Affiliation: | 1. School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, PR China;2. School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore;3. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, PR China;1. Structural Integrity Group, Escuela Politécnica Superior, Avenida Cantabria s/n, 09006 Burgos, Spain;2. Civil Engineering Department, University of Burgos, Calle Villadiego s/n, 09001 Burgos, Spain;1. Programa de Pós-Graduação em Ciência e Engenharia de Materiais, Universidade Federal de São Carlos, Rod. Washington Luiz, km 235, 13565-905 São Carlos, SP, Brazil;2. Centro de Pesquisa & Desenvolvimento Leopoldo Américo Miguêz de Mello (Cenpes), Avenida Horácio Macedo, 950, 21941-915 Rio de Janeiro, RJ, Brazil;3. Univ. Grenoble Alpes, LEPMI, F-38000 Grenoble, France;4. CNRS, LEPMI, F-38000 Grenoble, France;5. Departamento de Engenharia de Materiais, Universidade Federal de São Carlos, Rod. Washington Luiz, km 235, 13565-905 São Carlos, SP, Brazil;1. TUBITAK MAM Materials Institute, Gebze 41470, Kocaeli, Turkey;2. Department of Material Science and Engineering, Gebze Technical University, Gebze 41400, Kocaeli, Turkey |
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| Abstract: | Ge nanocrystal (nc-Ge) embedded SiO2 nanocomposite thin films have been synthesized with the ion implantation technique. The distribution profile of nc-Ge in the SiO2 matrix can be tailored by varying the implantation energy and dose in the Ge ion implantation process; thus the effective dielectric constant of the nc-Ge/SiO2 nanocomposite thin films can be engineered. The effective metal–oxide-semiconductor (MOS) capacitance of the nanocomposite thin films has been calculated using the sub-layer model and the Maxwell–Garnett effective medium approximation, taking the reduced dielectric constant corresponding to the nanometer size of nc-Ge into account. On the other hand, capacitance–voltage measurements on the MOS structures based on the nc-Ge/SiO2 thin films have been conducted to extract the capacitance experimentally. The modeling and measurement results have shown good agreement, suggesting that the nanocomposite dielectric engineering can be easily realized through the energy- and dose-controlled Ge+ implantation technique. |
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| Keywords: | Dielectric engineering Ion implantation |
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