Micro-patterning of PZT thick film by lift-off using ZnO as a sacrificial layer |
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| Affiliation: | 1. School of Materials Science and Engineering, Anhui University of Technology, Maanshan 243002, PR China;2. Department of Electrical Engineering, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong;1. Institute of Plasma Physics, ASCR, Za Slovankou 3, 182 00 Praha 8, Czech Republic;2. Department of Electrotechnology, Faculty of Electrical Engineering, Czech Technical University, Technická 2, 166 27 Praha 6, Czech Republic |
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| Abstract: | Micro-pattern of 8.2-μm-thick PZT films was prepared on Pt/Ti/SiO2/Si (1 0 0) substrate wafer by combining composite sol–gel and a novel lift-off using ZnO as a sacrificial layer. The processes include ZnO sacrificial layer deposition and patterning, PZT film preparation, and final lift-off. The results reveal the micro-pattern was better than that formed by wet etching, the PZT thick films patterned by lift-off possessed similar dielectric characters, better ferroelectric properties, and higher breakdown voltage than those of films patterned by wet etching. The lift-off is suitable for micro-patterning of PZT thick films. |
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| Keywords: | D ZnO Composite sol–gel Micro-patterning Lift-off PZT thick film |
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