| 砷化镓中ps光脉冲激发的自由电子浓度及其空间Fourier分量的研究 |
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| 引用本文： | 马海明,李富铭. 砷化镓中ps光脉冲激发的自由电子浓度及其空间Fourier分量的研究[J]. 中国激光, 1990, 17(12): 717-720 |
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| 作者姓名： | 马海明 李富铭 |
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| 作者单位： | 上海复旦大学物理系 200433(马海明)，上海复旦大学物理系 200433(李富铭) |
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| 摘 要： | 本文给出了关于半绝缘GaAs中1.06μm ps光脉冲产生的自由电子的理论及计算结果,并讨论了从深能级跃迁与双光子跃迁的自由电子浓度的空间Fourier分量随激发光强度的变化。
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| 关 键 词： | GaAs 自由电子浓度 ps光脉冲 |
| 收稿时间： | 1988-11-28 |
A study of free-electron density and its spatial Fourier component excited by picosecond light pulses in GaAs |
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| Ma Haiming,Li Fuming. A study of free-electron density and its spatial Fourier component excited by picosecond light pulses in GaAs[J]. Chinese Journal of Lasers, 1990, 17(12): 717-720 |
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| Authors: | Ma Haiming Li Fuming |
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| Abstract: | The theory and calculation results of the free electrons generated by picosecond light pulses at 1.064μm in semi-insulating GaAs are presented, and the variation of the spatial Fourier components of the free-electron density from deep levels and two-photon absorption versus the intensity of excitation pulses is discussed. |
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| Keywords: | GaAs free-electron density pa light pulses |
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