| 一种3.1~10.6GHz超宽带低噪声放大器设计 |
| |
| 引用本文： | 张滨,杨银堂,李跃进.一种3.1~10.6GHz超宽带低噪声放大器设计[J].微波学报,2012,28(1):49-52. |
| |
| 作者姓名： | 张滨 杨银堂 李跃进 |
| |
| 作者单位： | 西安电子科技大学微电子学院,宽禁带半导体材料与器件教育部重点实验室,西安710071 |
| |
| 摘 要： | 设计了一种基于TSMC 0.13μm CMOS工艺,用于3.1～10.6GHz带宽的CMOS低噪声放大器。输入级采用共栅极结构,在宽频带内能较好地完成输入匹配。放大级采用共源共栅结构,为整个电路提供合适的增益。输出则采用源极输出器来进行输出匹配。使用ADS2006软件进行设计、优化和仿真。仿真结果显示,在3.1GHz～10.6GHz带宽内,放大器的电源电压在1.2V时,噪声系数低于2.5dB,增益为20.5dB,整个电路功耗为8mW。
|
| 关 键 词： | 低噪声放大器 超宽带 增益 噪声系数 共源共栅 |
Design of a 3.1 - 10.6GHz Ultra Wideband Low Noise Amplifier |
| |
| ZHANG Bin,YANG Yin-tang,LI Yue-jin.Design of a 3.1 - 10.6GHz Ultra Wideband Low Noise Amplifier[J].Journal of Microwaves,2012,28(1):49-52. |
| |
| Authors: | ZHANG Bin YANG Yin-tang LI Yue-jin |
| |
| Affiliation: | (Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices,Ministry of Education, School of Microelectronics,Xidian University,Xi’an 710071,China) |
| |
| Abstract: | A new design of 3.1~10.6GHz CMOS UWB LNA using TSMC 0.13μm process was proposed in this paper.Common-gate structure was used in the input stage leads to better input matching.Cascode structure is used in the second stage to increase the gain.Simulation and optimization of LNA have been done by ADS2006.Results show noise figure of the amplifier is below 2.5dB under working voltage of 1.2V in 3.1~10.6GHz,gain is 20.5±0.5dB and power consumption is 8mW. |
| |
| Keywords: | LNA UWB gain noise figure cascode |
| 本文献已被 CNKI 万方数据 等数据库收录！ |
| 点击此处可从《微波学报》浏览原始摘要信息 |
|
点击此处可从《微波学报》下载全文 |
|
