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非晶硅薄膜的YAG激光晶化工艺研究
引用本文:王强,张竹青,花国然,张华,李志锋.非晶硅薄膜的YAG激光晶化工艺研究[J].电子元件与材料,2013,32(1):48-50,58.
作者姓名:王强  张竹青  花国然  张华  李志锋
作者单位:1. 南通大学 电子信息学院,江苏南通,226019
2. 南通大学 机械工程学院,江苏南通,226019
3. 江苏综艺光伏有限公司,江苏南通,226376
基金项目:国家自然科学基金青年基金资助项目(No.51205212);江苏省自然科学基金资助项目(No.BK2008184);南通大学研究生科技创新计划资助项目(No.YKC12064)
摘    要:应用YAG激光器在不同工艺条件(激光脉冲频率及脉宽)下对非晶硅薄膜进行了微晶化处理。采用XRD和AFM对所制薄膜的物相结构和表面形貌进行了分析,并探索了激光脉冲占空比对非晶硅薄膜晶化的影响。结果表明,非晶硅薄膜在不同激光脉冲占空比情况下的结晶变化趋势均为多晶硅衬底表层先非晶化,后与非晶硅薄膜一起结晶,而利于其结晶的最佳占空比为1/25。已晶化硅薄膜的晶粒尺寸随占空比的增加先变大后变小。

关 键 词:激光技术  激光脉冲频率  激光脉宽  脉冲占空比

Crystallizing the amorphous silicon thin films by using YAG laser
WANG Qiang,ZHANG Zhuqing,HUA Guoran,ZHANG Hua,LI Zhifeng.Crystallizing the amorphous silicon thin films by using YAG laser[J].Electronic Components & Materials,2013,32(1):48-50,58.
Authors:WANG Qiang  ZHANG Zhuqing  HUA Guoran  ZHANG Hua  LI Zhifeng
Affiliation:1.School of Electronic Information,Nantong University,Nantong 226019,Jiangsu Province,China;2.School of Mechanical Engineering,Nantong University,Nantong 226019,Jiangsu Province,China;3.ZONEPV(Jiangsu) Co.Ltd,Nantong 226376,Jiangsu Province,China)
Abstract:Amorphous silicon thin films were micro-crystallized by YAG laser with different frequencies and pulse widths.The microstructure and surface morphology of the prepared samples were analyzed using XRD and AFM,and the effect of pulse duty factor of YAG laser on the crystallization of amorphous silicon thin films was studied.The results show that,irrespective of the pulse duty factor,the surface layer of the polycrystalline silicon substrate would become to be amorphous first and then crystallize together with the amorphous silicon thin films during the crystallization process.With increasing pulse duty factor,the grain size of the crystallized silicon films increases first and then decreases.The pulse duty factor most beneficial to the crystallization of amorphous silicon thin films is 1/25.
Keywords:laser technique  laser pulse frequency  laser pulse width  pulse duty factor
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