| GaN缓冲层对生长InN薄膜的影响 |
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| 引用本文： | 刘斌,张荣,谢自力,修向前,李亮,刘成祥,韩平,郑有炓. GaN缓冲层对生长InN薄膜的影响[J]. 半导体学报, 2006, 27(13): 101-104 |
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| 作者姓名： | 刘斌 张荣 谢自力 修向前 李亮 刘成祥 韩平 郑有炓 |
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| 作者单位： | 南京大学物理系 江苏省光电信息功能材料重点实验室，南京 210093;南京大学物理系 江苏省光电信息功能材料重点实验室，南京 210093;南京大学物理系 江苏省光电信息功能材料重点实验室，南京 210093;南京大学物理系 江苏省光电信息功能材料重点实验室，南京 210093;南京大学物理系 江苏省光电信息功能材料重点实验室，南京 210093;南京大学物理系 江苏省光电信息功能材料重点实验室，南京 210093;南京大学物理系 江苏省光电信息功能材料重点实验室，南京 210093;南京大学物理系 江苏省光电信息功能材料重点实验室，南京 210093 |
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| 摘 要： | 采用金属有机物化学气相沉积(MOCVD)方法生长六方相InN薄膜，利用氮化镓(GaN)缓冲层技术制备了高质量薄膜，得到了其能带带隙0.7eV附近对应的光致发光光谱(PL). 通过比较未采用缓冲层，同时采用低温和高温GaN缓冲层，以及低温GaN缓冲层结合高温退火三种生长过程，发现低温GaN缓冲层结合高温退火过程能够得到更优表面形貌和晶体质量的InN薄膜，同时表征了材料的电学性质和光学性质. 通过对InN薄膜生长模式的讨论，解释了薄膜表面形貌和晶体结构的差异.
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| 关 键 词： | 六方相InN MOCVD GaN缓冲层 |
Influence of GaN Buffer Layer for InN Growth |
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| Liu Bin,Zhang Rong,Xie Zili,Xiu Xiangqian,Li Liang,Liu Chengxiang,Han Ping and Zheng Youdou. Influence of GaN Buffer Layer for InN Growth[J]. Chinese Journal of Semiconductors, 2006, 27(13): 101-104 |
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| Authors: | Liu Bin Zhang Rong Xie Zili Xiu Xiangqian Li Liang Liu Chengxiang Han Ping Zheng Youdou |
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| Affiliation: | Key Laboratory of Advanced Photonic and Electronic Materials and Department of Physics,Nanjing University,Nanjing 210093,China;Key Laboratory of Advanced Photonic and Electronic Materials and Department of Physics,Nanjing University,Nanjing 210093,China;Key Laboratory of Advanced Photonic and Electronic Materials and Department of Physics,Nanjing University,Nanjing 210093,China;Key Laboratory of Advanced Photonic and Electronic Materials and Department of Physics,Nanjing University,Nanjing 210093,China;Key Laboratory of Advanced Photonic and Electronic Materials and Department of Physics,Nanjing University,Nanjing 210093,China;Key Laboratory of Advanced Photonic and Electronic Materials and Department of Physics,Nanjing University,Nanjing 210093,China;Key Laboratory of Advanced Photonic and Electronic Materials and Department of Physics,Nanjing University,Nanjing 210093,China;Key Laboratory of Advanced Photonic and Electronic Materials and Department of Physics,Nanjing University,Nanjing 210093,China |
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| Abstract: | The growth of hexagonal InN film on sapphire (0001) by metal organic chemical vapor deposition was investigated.The high quality InN film was obtained by using LT GaN buffer layer.The photoluminescence (PL) from InN film demonstrated that the optical band gap of InN is 0.7eV.By comparatively studying the influence of different GaN buffer layer:no GaN buffer layer (directly grown),low-temperature (LT) and high-temperature (HT) GaN buffer layers,LT GaN and annealing at high temperatures,the better crystalline quality and the smoother surface of InN film grown by using LT GaN buffer layer were found,which could be explained by the different growth mode of InN.The electrical properties of InN film also characterized by Hall effect measurements.The highest mobility of 567cm2/ (V·s) was obtained. |
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| Keywords: | hexagonal InN MOCVD GaN buffer layer |
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