| 中频交流磁控溅射制备AZO薄膜及退火工艺 |
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| 引用本文： | 齐玉明,梅冰,杨光. 中频交流磁控溅射制备AZO薄膜及退火工艺[J]. 电子元件与材料, 2007, 26(8): 62-64 |
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| 作者姓名： | 齐玉明 梅冰 杨光 |
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| 作者单位： | 吉林化工学院,物理系,吉林,吉林,132022;宏光纳米科技,深圳,有限公司,广东,深圳,518129 |
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| 摘 要： | 以锌铝合金为靶材,采用工业生产设备,用中频交流磁控溅射法在玻璃衬底上制备出了铝掺杂氧化锌(AZO)透明导电薄膜,研究了氩氧比、退火温度、退火时间对薄膜结构、光学和电学性能的影响。结果表明,氩气和氧气体积流量比为3:1时常温下得到薄膜的方阻值最低,400℃真空退火1 h后薄膜可见光平均透过率由84.0%上升到86.7%,方阻值由5 000Ω/□下降到108Ω/□。
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| 关 键 词： | 无机非金属材料 中频磁控溅射 AZO薄膜 退火 |
| 文章编号： | 1001-2028（2007）08-0062-03 |
| 修稿时间： | 2007-04-26 |
Anneal technique and the process of AZO thin films prepared by middle-frequency alternative magnetron sputtering |
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| QI Yu-ming,MEI Bing,YANG Guang. Anneal technique and the process of AZO thin films prepared by middle-frequency alternative magnetron sputtering[J]. Electronic Components & Materials, 2007, 26(8): 62-64 |
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| Authors: | QI Yu-ming MEI Bing YANG Guang |
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| Affiliation: | 1. Physical Department, Jilin Institute of Chemical Technology, Jilin 130022, Jilin Province, China; 2 Nanotechnology Limited Corporation, Shenzhen 518129, Guangdong Province, China |
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| Abstract: | The transparent conductive Al-doped zinc oxide(AZO) thin films were prepared on glass substrate using ZnAl alloy target by middle-frequency alternative magnetron sputtering.The effects of Ar/O2 proportion、anneal temperature、anneal time were investigated on the structure and photoelectric properties of AZO films.The results indicate the square resistance of AZO reach to the minimum with the Ar/O2 proportion 3:1.The average transmittance in visible light of AZO films increases from 84.0 % to 86.7 % and the square resistance decreases from 5 000 Ω/□ to 108 Ω/□ after 400 ℃ vacuum annealing for one hour. |
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| Keywords: | non-metallic inorganic material mid-frequency magnetron sputtering AZO thin films anneal |
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