| 一种基于In0.4Ga0.6As MOSFET 技术制备的新型射频开关器件 |
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| 引用本文： | 周佳辉,常虎东,张旭芳,杨靖治,刘桂明,李海鸥,刘洪刚.一种基于In0.4Ga0.6As MOSFET 技术制备的新型射频开关器件[J].半导体学报,2016,37(2):024005-4. |
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| 作者姓名： | 周佳辉 常虎东 张旭芳 杨靖治 刘桂明 李海鸥 刘洪刚 |
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| 基金项目： | Project supported by the National Natural Science Foundation of China，the Guangxi Natural Science Foundation，the Guangxi Department of Education Project，the Guilin City Technology Bureau，the China Postdoctoral Science Foundation Funded Project，the National Basic Research Program of China，the Innovation Project of GUET Graduate Education，the State key Laboratory of Electronic Thin Films and Integrated Devices |
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| 摘 要： | 本文采用InGaAs MOSFET技术成功制备了一种新型射频开关器件。这是首次采用InGaAs MOSFET技术设计设开关器件。器件的饱和电流密度为250mA/mm，最大跨导为370mS/mm，导通电阻为0.72 mΩ?mm2，，开关比为1×106。最大开态功率容量密度为533 mW/mm，关态功率密度为3667 mW/mm。文中设计的In0.4Ga0.6As MOSFET开关器件在0.1GHz~7.5GHz频率范围内的插入损耗低于1.8dB，隔离度大于20dB。最小插入损耗和最大隔离度分别为0.27dB和65dB。本文的研究说明了InGaAs MOSFET技术对于射频开关器件的应用拥有巨大的潜力。
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| 关 键 词： | RF switch InGaAs MOSFET Ⅲ-Ⅴ CMOS |
| 收稿时间： | 6/1/2015 12:00:00 AM |
| 修稿时间： | 2015/7/26 0:00:00 |
Fabrication of a novel RF switch device with high performance using In0.4Ga0.6As MOSFET technology |
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| Zhou Jiahui,Chang Hudong,Zhang Xufang,Yang Jingzhi,Liu Guiming,Li Haiou,Liu Honggang.Fabrication of a novel RF switch device with high performance using In0.4Ga0.6As MOSFET technology[J].Chinese Journal of Semiconductors,2016,37(2):024005-4. |
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| Authors: | Zhou Jiahui Chang Hudong Zhang Xufang Yang Jingzhi Liu Guiming Li Haiou Liu Honggang |
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| Affiliation: | 1. Microwave Device and IC Department, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;Guangxi Experiment Center of Information Science, Guilin University of Electronic Technology, Guilin 541004, China;2. Guangxi Experiment Center of Information Science, Guilin University of Electronic Technology, Guilin 541004, China;3. Microwave Device and IC Department, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China |
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| Abstract: | |
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| Keywords: | RF switch InGaAs MOSFET III-V CMOS |
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