SiC衬底上栅长70 nm fT / fmax >160 GHz的InAlN/GaN HEMTs器件

在SiC衬底上制备了InAlN/GaN 高电子迁移率晶体管（HEMTs），并进行了表征。为提高器件性能，综合采用了多种技术，包括高电子浓度，70 nm T型栅，小的欧姆接触电阻和小源漏间距。制备的InAlN/GaN器件在栅偏压为1 V时得到的最大饱和漏电流密度为1.65 A/mm，最大峰值跨导为382 mS/mm。70 nm栅长器件的电流增益截止频率fT和最大振荡频率fmax分别为162 GHz和176 GHz。

70-nm-gated InAlN/GaN HEMTs grown on SiC substrate with fT/fmax > 160 GHz

InAlN/GaN high-electron-mobility transistors (HEMTs) on SiC substrate were fabricated and characterized. Several techniques, consisting of high electron density, 70 nm T-shaped gate, low ohmic contacts and a short drain-source distance, are integrated to gain high device performance. The fabricated InAlN/GaN HEMTs exhibit a maximum drain saturation current density of 1.65 A/mm at V_gs = 1 V and a maximum peak transconductance of 382 mS/mm. In addition, a unity current gain cut-off frequency (f_T) of 162 GHz and a maximum oscillation frequency (f_max) of 176 GHz are achieved on the devices with the 70 nm gate length.