A high-conductivity insulated gate bipolar transistor with Schottky hole barrier contact |
| |
| Authors: | Jiang Mengxuan Z.John Shen Wang Jun Yin Xin Shuai Zhikang Lu Jiang |
| |
| Affiliation: | 1. College of Electrical and Information Engineering, Hunan University, Changsha 410082, China;2. Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China |
| |
| Abstract: | This letter proposes a high-conductivity insulated gate bipolar transistor (HC-IGBT) with Schottky contact formed on the p-base, which forms a hole barrier at the p-base side to enhance the conductivity modulation effect. TCAD simulation shows that the HC-IGBT provides a current density increase by 53% and turn-off losses decrease by 27% when compared to a conventional field-stop IGBT (FS-IGBT). Hence, the proposed IGBT exhibits superior electrical performance for high-efficiency power electronic systems. |
| |
| Keywords: | breakdown voltage conductivity modulation current density latch up IGBT |
| 本文献已被 万方数据 等数据库收录！ |
| 点击此处可从《半导体学报》浏览原始摘要信息 |
|
点击此处可从《半导体学报》下载全文 |
|
