利用磁控溅射及热蒸发法制备SnO2纳米线及结构表征

以Sn为原料，采用磁控溅射及热蒸发法制得SnO2纳米线，用扫描电镜（SEM）、透射电镜（TEM）、X射线衍射（XRD）、能量弥散X射线谱（EDS）、傅氏转换红外线光谱分析（FTIR）、拉曼光谱分析（Raman）等测试手段对纳米结构进行表征，结果表明，合成的二氧化锡纳米结构具有金红石结构，二氧化锡纳米材料的生长机制遵循气一液一固生长机制，生长过程中的温度和退火时间对二氧化锡纳米结构的形貌起着极其重要的作用，可以通过这些因素对二氧化锡纳米材料实行可控生长。

Preparation of SnO2 Nanostructures by Magnetron Sputtering and Thermal Evaporation Method

SnO2 nanowires were synthesized by thermal evaporation of Sn powers and Magnetron sputtering. The products were characterized by Scanning electronmicroscope（SEM）, Transmission microscope（TEM）, X-ray diffraction（XRD）, Ener- gy-dispesive X-ray spectroscopy（EDS）, Fourier Transform infrared spectroscopy（FTIR）, Raman spectra. These character- izations all indicate that the products are rutile structure. It＇s found that annealing temperature and time play a very im- portant role in determining the structure of SnO2 nanomaterial. Therefore, the growth of nanomaterial can be well con- trolled by these factors.