Pressureless sintering of titanium carbide doped with boron or boron carbide |
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| Affiliation: | 1. The State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Shanghai 200050, China;2. University of Chinese Academy of Sciences, Beijing 100049, China;3. State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, Research Institute of Functional Materials, Donghua University, Shanghai 201620, China;1. Young Researchers and Elite Club, Miyaneh Branch, Islamic Azad University, Miyaneh, Iran;2. Young Researchers and Elite Club, Central Tehran Branch, Islamic Azad University, Tehran, Iran;3. Department of Mechanical Engineering, University of Mohaghegh Ardabili, Ardabil, Iran;4. Department of Materials Science and Engineering, University of Tabriz, Tabriz, Iran;5. Department of Mechanical Engineering, Quchan Branch, Islamic Azad University, Quchan, Iran;1. Institute of Materials Research, Slovak Academy of Sciences, Division of Ceramic and Non-Metallic Systems, Watsonova 47, 040 01 Ko?ice, Slovak Republic;2. AGH University of Science and Technology in Krakow, Faculty of Materials Science and Ceramics, Department of Ceramics and Refractories, al. A. Mickiewicza 30, 30-059 Krakow, Poland;3. Pavol Jozef ?afárik University in Ko?ice, Faculty of Science, Institute of Physics, Department of Condensed Matter Physics,Park Angelinum 9, 040 01 Ko?ice, Slovak Republic;4. Institute of Inorganic Chemistry, Slovak Academy of Sciences, Department of Ceramics, Dúbravská cesta 9, 845 36 Bratislava, Slovak Republic;1. Department of Materials Science and Engineering, Monash University, Vic. 3800, Australia;2. School of Mechanical and Mining Engineering, The University of Queensland, Qld. 4072, Australia;3. Department of Chemical Engineering, Monash University, Vic. 3800, Australia |
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| Abstract: | Titanium carbide ceramics with different contents of boron or B4C were pressureless sintered at temperatures from 2100 °C to 2300 °C. Due to the removal of oxide impurities, the onset temperature for TiC grain growth was lowered to 2100 °C and near fully dense (>98%) TiC ceramics were obtained at 2200 °C. TiB2 platelets and graphite flakes were formed during sintering process. They retard TiC grains from fast growth and reduced the entrapped pores in TiC grains. Therefore, TiC doped with boron or B4C could achieve higher relative density (>99.5%) than pure TiC (96.67%) at 2300 °C. Mechanical properties including Vickers’ hardness, fracture toughness and flexural strength were investigated. Highest fracture toughness (4.79 ± 0.50 MPa m1/2) and flexural strength (552.6 ± 23.1 MPa) have been obtained when TiC mixed with B4C by the mass ratio of 100:5.11. The main toughening mechanisms include crack deflection and pull-out of TiB2 platelets. |
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| Keywords: | Titanium carbide Pressureless sintering Microstructures Mechanical properties |
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