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Induction of ferroelectricity in nanoscale ZrO2 thin films on Pt electrode without post-annealing |
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| Affiliation: | 1. NaMLab gGmbH, Noethnitzer Str. 64, Dresden D-01187, Germany;2. Chair of Nanoelectronic Materials, TU Dresden, D-01062 Dresden, Germany;1. University of Florida, Department of Electrical and Computer Engineering, Gainesville, Florida, 32611, USA;2. University of Florida, Department of Materials Science and Engineering, Gainesville, Florida, 32611, USA;3. University of Florida, Department of Mechanical and Aerospace Engineering, Gainesville, Florida, 3261, USA |
| Abstract: | Large stable ferroelectricity in nanoscale undoped zirconia (ZrO2) thin films prepared without post-annealing has been demonstrated for the first time. Remanent polarizations up to 12 μC cm?2 were obtained in the as-deposited ZrO2 thin films prepared by remote plasma atomic layer deposition at 300 °C substrate temperature on the Pt electrode. Ferroelectric crystallization of the films was achieved without post-annealing, which is highly beneficial to the application of the films in non-volatile memories and ultralow-power nanoelectronics. The existence of the ferroelectric orthorhombic phase with noncentrosymmetric space group Pbc21 in the as-deposited ZrO2 thin films was confirmed by high-resolution transmission electron microscopy. |
| Keywords: | Zirconia Ferroelectricity Atomic layer deposition Thin films TEM |
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