首页 | 本学科首页   官方微博 | 高级检索  
     


Light controlled resistive switching and photovoltaic effects in ferroelectric 0.5Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3 thin films
Affiliation:1. Centre of Physics, University of Minho, Campus de Gualtar, 4710-057, Braga, Portugal;2. IFIMUP and IN-Institute of Nanoscience and Nanotechnology, Departamento de Física e Astronomia, Faculdade de Ciências da Universidade do Porto, Rua do Campo Alegre 687, 4169-007, Porto, Portugal;3. Department of Physics, Madanapalle Institute of Technology & Science, Madanapalle-517325, Andhra Pradesh, India;4. Department of Physics, School of Basic and Applied Science, Central University of Tamil Nadu, Thiruvarur, 610 101, India;5. ENCOMAT Group, E.E.I., University of Vigo, Rúa Maxwell 9, 36310, Vigo, Spain;6. Centro de Química-Vila Real, Departamento de Química, ECVA, Universidade de Trás-os-Montes e Alto Douro, 5001-801, Vila Real, Portugal;1. Centre of Physics, University of Minho, Campus de Gualtar, 4710-057 Braga, Portugal;1. Centre of Physics, University of Minho, Campus de Gualtar, 4710-057 Braga, Portugal;2. LPS, Physics Department, Faculty of Sciences, BP 1796, Fes, Morocco;3. LPTA, Université Hassan II-Casablanca, Faculté des Sciences, B.P. 5366, Maârif, Morocco;4. Institut Néel, CNRS, Université J. Fourier, BP 166, 38042 Grenoble, France;5. Departamento de Física, Faculdade de Ciências, Universidade de Lisboa and CeFEMA, Campo Grande, 1749-016 Lisboa, Portugal;6. Research Institute for Chemistry, Nizhni Novgorod State University, 603950 Nizhni Novgorod, Russia;7. IFIMUP and IN-Institute of Nanoscience and Nanotechnology, Departamento de Física e Astronomia, Faculdade de Ciências da Universidade do Porto, Rua do Campo Alegre 687, 4169-007, Porto, Portugal;8. FST Tanger, Physics Department, BP 416, Tangier, Morocco;1. School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006, PR China;2. Institute for Superconducting and Electronic Materials, University of Wollongong, Squires Way, North Wollongong, NSW 2500, Australia;1. Department of Science and Humanities, Indian Institute of Information Technology, Tiruchirappalli, 620012, Tamil Nadu, India;2. Department of Physics, School of Basic and Applied Sciences, Central University of Tamil Nadu, Thiruvarur, 610 005, India;3. Department of Physics, MVJ College of Engineering (Autonomous), Affiliated to Visvesvaraya Technological University, Bangalore, 560067, India;1. Center on Nanoenergy Research, School of Physical Science & Technology, Guangxi University, Nanning, 530004, China;2. Department of Manufacturing and Materials, Cranfield University, Cranfield, Bedfordshire, MK43 0AL, United Kingdom
Abstract:In this work, the structural and ferroelectric properties of 0.5Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3 (0.5BZT-0.5BCT) thin films deposited at different pulse repetition rates were studied. The films deposited at pulse repetition rate of 1 Hz display the optimum values of ferroelectric polarization and dielectric permittivity and are chosen for the investigation of resistive switching and photovoltaic studies. The Pt/0.5BZT-0.5BCT/ITO capacitors show the electroforming free resistive switching (RS) and is explained based on the polarization modulation of the Schottky barrier at the 0.5BZT-0.5BCT/ITO interface. Furthermore, it is shown that the RS ratio and switching voltage can be tuned with white light illumination. The capacitors display photovoltaic effect with the open circuit voltage ≈0.8 V and the short circuit current density ≈72.6 μAcm−2. The photovoltaic efficiency is found to be ≈0.010% and is greater than that of other perovskite ferroelectric thin films. The underlying mechanism for enhanced RS and photovoltaic effects is highlighted.
Keywords:Light controlled resistive switching  Photovoltaic effect  Ferroelectricity  (0  5BZT-0  5BCT) thin films
本文献已被 ScienceDirect 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号