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TiN modified SiC with enhanced strength and electrical properties
Affiliation:1. School of Materials Science and Engineering, Xi''an University of Technology, Xi''an 710048, PR China;2. School of Materials Science and Engineering, Henan University of Science and Technology, Henan 471003, PR China;1. Department of Mechanical Engineering, University of Mohaghegh Ardabili, Ardabil, Iran;2. Koc University Surface Science and Technology Center, Istanbul, Turkey
Abstract:SiC based composites were manufactured with varying TiN content (0–50 V%) using Al2O3 and Y2O3 sintering aids. Basic dilatometry measurements were performed to determine when densification begins within the composite system. Samples were consolidated via uni-axial hot pressing at 1900 °C to produce ceramic composites with >98% theoretical density. Electrical measurements show increasing TiN additions reduce resistivity and begin to plateau at 40–50V%. Resistivity decreased from 2.0 × 105 Ω  cm (0% TiN) to 2.0 × 10−4 Ω  cm (50V% TiN). Flexural strengths were characterized and compared against a baseline (0% TiN) SiC. Strengths increased gradually with TiN content. A maximum strength 921 MPa was observed at 40V% TiN content vs. 616 MPa for the baseline SiC. This was a gain of 50% over baseline. Additions beyond that range did not produce further gains in strength.
Keywords:Silicon carbide  Titanium nitride  Conductive ceramics  Ceramic composites  High strength SiC
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