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Phase formation,microstructure development and thermoelectric properties of (ZnO)kIn2O3 ceramics
Affiliation:1. Center for Engineering Training and Basic Experimentation, Heilongjiang University of Science and Technology, Harbin 150022, PR China;2. Key Laboratory for Photonic and Electronic Bandgap Materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin 150025, PR China;1. Key laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China;2. School of Materials Science and Engineering and Materials Genome Institute, Shanghai University, Shanghai 200444, China;3. Department for Nanostructured Materials, Jozef Stefan Institute, Ljubljana SI-1000, Slovenia;4. China Academy of Engineering Physics, Institute of Fluid Physics, Sichuan 621900, China
Abstract:The (ZnO)kIn2O3 system is interesting for applications in the fields of thermoelectrics and opto-electronics. In this study we resolve the complex homologous phase evolution with increasing temperature in polycrystalline ceramics for k = 5, 11 and 18 and its influence on the microstructural development and thermoelectric properties. The phase formation at temperatures above 1000 °C is influenced by the local ZnO-to-In2O3 ratio in the starting-powder mixture. While the Zn5In2O8 equilibrium phase for k = 5 is formed directly after sintering at 1200 °C, the formation of the k = 11 and k = 18 equilibrium phases proceeds at higher temperatures by diffusion between the initially formed phases, the lower k Zn5In2O8/Zn7In2O10 and the higher k ZnkIn2Ok+3 (9 < k < ∞). Such phase formation affects the sintering and grain growth, and consequently, with the degree of structural and compositional homogeneity, also the thermoelectric characteristics of the (ZnO)kIn2O3 ceramics.
Keywords:Zinc oxide  Indium (III) oxide  Homologous phases  Microstructure  Thermoelectric properties
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