The influence of the crystallization temperature on the reliability of PbTiO3 thin films prepared by chemical solution deposition |
| |
| Affiliation: | 1. Instituto de Ciencia de Materiales de Madrid, CSIC, Cantoblanco, 28049 Madrid, Spain;2. Physics Department, Faculty of Science, Zagazig University, 44519 Zagazig, Egypt;1. Robert Bosch GmbH, Automotive Electronics, Tübinger-Str. 123, 72762 Reutlingen, Germany;2. Robert Bosch GmbH, Corporate Sector Research and Advanced Engineering, 70465 Stuttgart, Germany;3. German Aerospace Center (DLR), Institute of Materials Research, Linder Höhe, 51147 Cologne, Germany;1. Department of Physics, Changwon National University, Changwon, Gyungnam 51140, Republic of Korea;2. School of Materials Science and Engineering, Changwon National University, Changwon, Gyungnam 51140, Republic of Korea;3. Department of Advanced Materials Engineering, Keimyung University, Dalseo-gu, Daegu 42601, Republic of Korea;4. Current address: Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi, Kofu, Yamanashi 400-8510, Japan;1. Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai 200241, China;2. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Science, Shanghai 200083, China;3. Collaborative Innovation Center of Extreme Optics, Shanxi University,Taiyuan, Shanxi, 030006, China;1. School of Materials, University of Manchester, Oxford Rd, Manchester, M13 9PL, UK;2. Diamond Light Source Ltd, Harwell Science and Innovation Campus, Didcot, OX11 0DE, UK |
| |
| Abstract: | The preparation of quality ferroelectric PbTiO3 (PT) thin films at the lowest possible temperature preserving its functional properties is necessary for their integration in microdevices. The crystallization below, close or above the para-ferrolectric transition temperature of the PbTiO3 must produce an important effect on the microstructure, texture and residual stress state of the films and on functional properties. In this paper, the Chemical Solution Deposition method has been used to prepare PbTiO3 films at different temperatures around that of the ferroelectric to paraelectric phase transition. The films were analyzed by X-ray diffraction, Optical and Scanning Electron Microscopy, and their microstructure, texture and residual stress correlated with their functional properties. The results show that these PT films prepared with crystallization temperatures close or below the phase transition develop a favorable microstructure and texture that lead to high remnant and saturation polarization values, making them good candidates for their integration in microdevices. |
| |
| Keywords: | Thin films Ferroelectrics Low temperature processing Texture Stress relief |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
