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一种可用于浮动电源的高精度欠压锁定电路
引用本文:刘德尚,苟超,周泽坤,明鑫,王卓,张波.一种可用于浮动电源的高精度欠压锁定电路[J].微电子学,2014(3):317-320.
作者姓名:刘德尚  苟超  周泽坤  明鑫  王卓  张波
作者单位:电子科技大学电子薄膜与集成器件国家重点实验室;
摘    要:提出了一种新型的欠压锁定电路。该电路结构简单,可用于浮动电源轨,具有精确的迟滞特性,占用面积小,且与CMOS工艺完全兼容。采用0.6μm 16VCDMOS工艺进行仿真、流片验证。Hspice仿真结果表明,其锁定阈值精度高、功耗低。芯片测试结果表明,该电路可用于浮动电源,所测得的欠压锁定阈值与设计值相吻合。

关 键 词:欠压锁定  迟滞  浮动电源  高精度  CDMOS工艺

A High Accuracy UVLO Circuit for Floating Power Supply
LIU Deshang,GOU Chao,ZHOU Zekun,MING Xin,WANG Zhuo and ZHANG Bo.A High Accuracy UVLO Circuit for Floating Power Supply[J].Microelectronics,2014(3):317-320.
Authors:LIU Deshang  GOU Chao  ZHOU Zekun  MING Xin  WANG Zhuo and ZHANG Bo
Affiliation:State Key Lab. of Elec. Thin Films and Integr. Dev., Univ. of Elec. Sci. and Technol. of China, Chengdu 610054, P. R. China;State Key Lab. of Elec. Thin Films and Integr. Dev., Univ. of Elec. Sci. and Technol. of China, Chengdu 610054, P. R. China;State Key Lab. of Elec. Thin Films and Integr. Dev., Univ. of Elec. Sci. and Technol. of China, Chengdu 610054, P. R. China;State Key Lab. of Elec. Thin Films and Integr. Dev., Univ. of Elec. Sci. and Technol. of China, Chengdu 610054, P. R. China;State Key Lab. of Elec. Thin Films and Integr. Dev., Univ. of Elec. Sci. and Technol. of China, Chengdu 610054, P. R. China;State Key Lab. of Elec. Thin Films and Integr. Dev., Univ. of Elec. Sci. and Technol. of China, Chengdu 610054, P. R. China
Abstract:
Keywords:UVLO  Hysteresis  Floating power supply  High accuracy  CDMOS process
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