| 分子束外延生长InGaAs/GaAs异质结及其在独特场效应晶体管中的应用 |
| |
| 引用本文： | 谢自力,邱凯,尹志军,方小华,王向武,陈堂胜. 分子束外延生长InGaAs/GaAs异质结及其在独特场效应晶体管中的应用[J]. 电子器件, 2000, 23(4): 258-261 |
| |
| 作者姓名： | 谢自力 邱凯 尹志军 方小华 王向武 陈堂胜 |
| |
| 作者单位： | 南京电子器件研究所 南京 210016 |
| |
| 摘 要： | 用分子束外延技术生长了ＩｎＧａＡｓ／ＧａＡｓ异质结材料，并用ＨＡＬＬ效应法和电化学Ｃ－Ｖ分布研究其特性。讨论了ＩｎＧａＡｓ／ＧａＡｓ宜质结杨效应晶体管（ＨＦＥＴ）的优越性。和ＧａＡｓ ＭＥＳＦＥＴＳ或ＨＥＭＴ相比，由于ＨＦＥＴ没有Ａｌ组份，具有低温特性好，低噪声和高增益等特点。本文研究了具有ＩｎＧａＡｓ／ＧａＡｓ双沟道和独特掺杂分布的低噪声高增益ＨＦＥＴ。
|
| 关 键 词： | 场效应晶体管 分子束外延生长 InGaAs／GaAs 异质结 |
| 文章编号： | 1005-9490(2000)04-258-04 |
| 修稿时间： | 2000-06-02 |
The MBE Growth of InGaAs/GaAs Heterostructures and Its Applications in Special Structure Field Effect Transistor |
| |
| XIE Zi Li,QIU Kai,FANG Xiao Hua,YING Zi Jun,WANG Xiang Wu,CHENG Tang Shen. The MBE Growth of InGaAs/GaAs Heterostructures and Its Applications in Special Structure Field Effect Transistor[J]. Journal of Electron Devices, 2000, 23(4): 258-261 |
| |
| Authors: | XIE Zi Li QIU Kai FANG Xiao Hua YING Zi Jun WANG Xiang Wu CHENG Tang Shen |
| |
| Abstract: | The MBE growth technology, Hall effect and electrochemical C V profiles of InGaAs/GaAs heterostructures are investigated. The advantages of InGaAs/GaAs heterostructure field effect transistor (HFET) over GaAs MESFETs or HEMTs are discribed. Aluminium free devices show their advantages, especially in the applications at low temperatures. We have successfully developed a low noise high gain HFET with special doping profile sturcture and InGaAs/GaAs two channels. |
| |
| Keywords: | InGaAs/GaAs Heterostructure MBE HFET Doping profile Channel |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
