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Comprehensive numerical simulation of threshold-voltage transients in nitride memories |
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| Authors: | Aurelio Mauri Salvatore M. Amoroso Christian Monzio Compagnoni Alessandro Maconi Alessandro S. Spinelli |
| Affiliation: | a Micron, R&D – Technology Development, 20041 Agrate Brianza (MI), Italy;b Dipartimento di Elettronica e Informazione, Politecnico di Milano, 20133 Milano, Italy;c IU.NET, 20133 Milano, Italy;d Istituto di Fotonica e Nanotecnologie-Consiglio Nazionale delle Ricerche, 20133 Milano, Italy |
| Abstract: | A new non-local algorithm for accurately calculating the band-to-band tunneling current suitable for TCAD semiconductor simulators is proposed in this paper. The proposed algorithm captures the essential physics of multi-dimensional tunneling in a 2D structure, and is designed to be robust and to achieve independence on the mesh grid. The new algorithm enables accurate modeling of T-FET and investigation of its device physics. |
| Keywords: | Non volatile memories Charge-trap memories Tunneling Semiconductor device modeling |
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