Quarter-micrometer gate ion-implanted GaAs MESFET's with an f1 of 126 GHz |
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| Authors: | Wang GW Feng M |
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| Affiliation: | Ford Microelectron. Inc., Colorado Springs, CO ; |
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| Abstract: | The fabrication and characterization of a 0.25-μm-gate, ion-implanted GaAs MESFET with a maximum current-gain cutoff frequency ft of 126 GHz is reported. Extrapolation of current gains from bias-dependent S-parameters at 70-100% of I dss yields f1's of 108-126 GHz. It is projected that an f1 of 320 GHz is achievable with 0.1-μm-gate GaAs MESFETs. This demonstration of f1's over 100 GHz with practical 0.25-μm gate length substantially advances the high-frequency operation limits of short-gate GaAs MESFETs |
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