Effects of double-doping on physical properties of V2O3-based alloys |
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Authors: | H Jhans H Kuwamoto JM Honig |
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Affiliation: | Department of Chemistry Purdue University West Lafayette, Indiana 47907 USA |
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Abstract: | The electrical resistivity of several types of (V1?x?yMxM′y)2O3 alloys have been investigated, where M and M′ represent Al, Ga, and 3d transition metal elements. It was found that effects previously obtained by incorporation of M = Al, Cr, may be counteracted by use of M′ = Ti or Ga. On the basis of this information 3-dimensional phase diagrams have been sketched out; several sets of critical points have been encountered. The physical characteristics of (Ti1?yCry)2O3 have also been determined; the electrical properties of the alloy y = 0.4 and 0.6 are remarkably similar to those of (V1?xCrx)2O3 with x = 0.02, 0.03. |
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