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基于1ED020I12-FA的IGBT栅极驱动电路应用研究
引用本文:雷鹏,黄玉平,于志远. 基于1ED020I12-FA的IGBT栅极驱动电路应用研究[J]. 微电机, 2011, 44(4): 91-94
作者姓名:雷鹏  黄玉平  于志远
作者单位:中国运载火箭技术研究院第十八研究所,北京,100076
摘    要:针对现有栅极驱动芯片M57962L体积大、环境适应性差的问题,经过深入调研,选用1ED020I12-FA栅极驱动芯片代替M57962L。设计基于该芯片的新型功率驱动电路,并对其栅极驱动性能、过流保护、故障恢复、功率消耗等性能进行了试验研究。试验结果表明基于1ED020I12-FA的新型驱动电路具有开关速度快、体积小、功耗低、温度范围宽的优点,可以替代现有驱动电路。

关 键 词:IGBT  栅极驱动电路  伺服驱动器

Application on IGBT Gate Driver with 1ED020I12-FA
LEI Peng,HUANG Yuping,YU Zhiyuan. Application on IGBT Gate Driver with 1ED020I12-FA[J]. Micromotors, 2011, 44(4): 91-94
Authors:LEI Peng  HUANG Yuping  YU Zhiyuan
Affiliation:LEI Peng,HUANG Yuping,YU Zhiyuan(The 18th Institute,China Academy of Launch Vehicle Technology,Beijing 100076,China)
Abstract:Considered with the problem of big capacity and bad environmental adaptation of gate driver M57962,the diver has to be replaced by 1ED020I12-FA of Infinoen Corporation in this paper.A new gate driving circuit based on 1ED020I12-FA was designed.Some experiments,such as the gate driving performance,over-current protection,failure recovery,power consumption,were done.The experiments results indicate that the gate driver circuit with 1ED020I12-FA has more advantages for faster switching speed,lower capacity and...
Keywords:IGBT  gate drive circuit  servo driver  
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