| 电子行业用高纯金溅射靶材研究综述 |
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| 引用本文： | 谭志龙,陈家林,闻明,王传军,郭俊梅,许彦亭,沈月,管伟明. 电子行业用高纯金溅射靶材研究综述[J]. 贵金属, 2019, 40(2): 83-87, 94 |
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| 作者姓名： | 谭志龙 陈家林 闻明 王传军 郭俊梅 许彦亭 沈月 管伟明 |
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| 作者单位： | 昆明贵金属研究所,稀贵金属综合利用新技术国家重点实验室云南省贵金属材料重点实验室,昆明650106;昆明贵金属研究所,稀贵金属综合利用新技术国家重点实验室云南省贵金属材料重点实验室,昆明650106;昆明贵金属研究所,稀贵金属综合利用新技术国家重点实验室云南省贵金属材料重点实验室,昆明650106;昆明贵金属研究所,稀贵金属综合利用新技术国家重点实验室云南省贵金属材料重点实验室,昆明650106;昆明贵金属研究所,稀贵金属综合利用新技术国家重点实验室云南省贵金属材料重点实验室,昆明650106;昆明贵金属研究所,稀贵金属综合利用新技术国家重点实验室云南省贵金属材料重点实验室,昆明650106;昆明贵金属研究所,稀贵金属综合利用新技术国家重点实验室云南省贵金属材料重点实验室,昆明650106;昆明贵金属研究所,稀贵金属综合利用新技术国家重点实验室云南省贵金属材料重点实验室,昆明650106 |
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| 基金项目： | 云南省重点研发计划科技入滇专项项目(2017IB016) |
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| 摘 要： | 围绕半导体集成电路产业的需求，综述高纯金提纯中杂质元素的控制，制备工艺中的金靶材结构设计、微结构调控技术及靶材与背板焊接绑定等技术的研究现状。提出通过行业协调修订相关产品标准，结合溅射设备完善靶材的结构设计，开展靶材微结构调控进行金薄膜与靶材结构的关联性研究，拓展高纯金靶材的绑定技术等研究方向。
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| 关 键 词： | 金属材料 半导体集成电路 高纯金 溅射靶材 |
| 收稿时间： | 2018-11-21 |
Review on Study of High Purity Gold Sputtering Target Material Used in Electronics Industry |
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| TAN Zhilong,CHEN Jialin,WEN Ming,WANG Chuanjun,GUO Junmei,XU Yanting,SHEN Yue and GUAN Weiming. Review on Study of High Purity Gold Sputtering Target Material Used in Electronics Industry[J]. Precious Metals, 2019, 40(2): 83-87, 94 |
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| Authors: | TAN Zhilong CHEN Jialin WEN Ming WANG Chuanjun GUO Junmei XU Yanting SHEN Yue GUAN Weiming |
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| Affiliation: | Yunnan Key Laboratory of Precious Metallic Material, State Key Laboratory of New Technologies for Comprehensive Utilization of Platinum Metals, Kunming Institute of Precious Metals, Kunming 650106, China,Yunnan Key Laboratory of Precious Metallic Material, State Key Laboratory of New Technologies for Comprehensive Utilization of Platinum Metals, Kunming Institute of Precious Metals, Kunming 650106, China,Yunnan Key Laboratory of Precious Metallic Material, State Key Laboratory of New Technologies for Comprehensive Utilization of Platinum Metals, Kunming Institute of Precious Metals, Kunming 650106, China,Yunnan Key Laboratory of Precious Metallic Material, State Key Laboratory of New Technologies for Comprehensive Utilization of Platinum Metals, Kunming Institute of Precious Metals, Kunming 650106, China,Yunnan Key Laboratory of Precious Metallic Material, State Key Laboratory of New Technologies for Comprehensive Utilization of Platinum Metals, Kunming Institute of Precious Metals, Kunming 650106, China,Yunnan Key Laboratory of Precious Metallic Material, State Key Laboratory of New Technologies for Comprehensive Utilization of Platinum Metals, Kunming Institute of Precious Metals, Kunming 650106, China,Yunnan Key Laboratory of Precious Metallic Material, State Key Laboratory of New Technologies for Comprehensive Utilization of Platinum Metals, Kunming Institute of Precious Metals, Kunming 650106, China and Yunnan Key Laboratory of Precious Metallic Material, State Key Laboratory of New Technologies for Comprehensive Utilization of Platinum Metals, Kunming Institute of Precious Metals, Kunming 650106, China |
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| Abstract: | Based on the technical requirements of semiconductor integrated circuit industry, the recent research status of gold sputtering target is reviewed. The related techniques, including the control of impurity elements in the high-pure gold refining and the structure design of gold target and the microstructure regulation are discussed along with the bonding method of target to back plate. New developments are proposed. They are (1) structure design of target on account of sputtering equipment, (2) establishment of the correlationship between the target structure and gold film, and (3) expansion of the research field into the bonding technology of high-pure gold target. Coordination and revision of the relevant product standards in the industry are also suggested. |
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| Keywords: | metal materials semiconductor integrated circuit high purity gold sputtering target |
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