柔性光电器件光电特性分析

近年来,基于非晶铟镓锌氧化物的柔性光电薄膜晶体管在柔性显示、通信和探测等领域得到广泛应用。为提高柔性光电探测器的开关电流比和光谱灵敏度,文中基于SILVACO软件的ATLAS对柔性有源层非晶铟镓锌氧化物薄膜晶体管进行了模拟分析,研究在不同材料有源层厚度比情况下具有底栅电极结构的柔性光电器件的光电性能。分析结果表明,双有源层结构比单有源层结构薄膜晶体管有更好的电学性能,特别是在有源层结构厚度为40 nm的情况下,当铟锌氧(Indium-Zinc-Oxide,IZO)与铟镓锌氧(Indium-Gallium-Zinc-Oxide, IGZO)材料的厚度比为1:7 时,柔性光电器件具有最佳的开关电流比;在波长为300 nm的光照下入射光对光器件的关态电流增益影响最大,光电器件的积分灵敏度最高,说明其对紫外光较敏感,有望应用在军事通讯、空间科学、环境和生物细胞癌变监测等紫外光波段探测领域。

Electrical and Optical Properties Analysis of Flexible Optoelectronic Devices

In recent years, flexible optoelectronic thin film transistors based on amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) have been widely used in flexible display, communication and detection. In order to improve the on/off current ratio and spectral sensitivity of the flexible photoelectric detector, the photoelectric properties of flexible photoelectric devices with bottom gate electrode structures is studied based on the ATLAS of SILVACO software. Flexible active layer a-IGZO thin film transistor under different material thickness ratios of active layers is studied by simulation methods. The results show that the double active layer thin film transistor has better electrical performance than the single active layer thin film transistor, especially when the thickness ratio of Indium-Zinc-Oxide (IZO) to Indium-Gallium-Zinc-Oxide (IGZO) material is 1:7 and the thickness of the active layer structure is 40 nm, the flexible photoelectric device has the best on/off current ratio; that the maximum effect of incident light on the turn-off current gain of the optical device occurs and the integral sensitivity of photoelectric devices is the highest when the wavelength is 300 nm. This indicates that it is sensitive to ultraviolet light and is expected to be applied in the UV band detection areas such as the military communication, space science, environment and biological cell canceration monitoring.