电子束在MOS结构中的能量沉积与辐照效应

根据电子输运“双群理论”计算出电子在Ｓｉ－ＳｉＯ２材料中的能量沉积。用与硅等２效的外推电离室测定了１．０ＭｅＶ和１．５ＭｅＶ的电子束在ＭＯＳ电容芯片中的吸收剂量。用Ｘ光电子谱、俄歇谱、深能级瞬态谱和Ｃ－Ｖ方法测量分析了ＭＯＳ电容Ｓｉ－ＳｉＯ２材料化学结构，界面态密度和Ｃ－Ｖ曲线在辐射前后的变化，根据理论和实验结果，从辐射剂量学的角度分析讨论了电子能量沉积，电离缺陷和辐射效应间的关系，并提出一个关于

Energy deposition and radiation effect in MOS structure irradiated with electron beams

The energy deposition for electron beams in Si-SiO2 materials has been calculated with the two-group theory of electron transportation. The absorption dose for 1.0MeV and 1.5MeV electrons in MOS capacitors was measured with an extrspolation ionization chamber which is equivalent to silicon in stopping power.The chemical structure, interface states and C-V curve of the MOS samples were analyzed before and after irradiation with X-ray photoelectron spectroscopy (XPS),Auger electron spectroscopy (AES), deep level transient spectroscopy (DLTS) and C-V method. According to the theory and experimental data, the relationship among election energy deposition, ionizing damage and radiation effect is derived from a view point of dosimetry. Finally, a preliminary explaination for the ionizing damage mechanisms is given.