High-efficiency V-band GaAs IMPATT diodes |
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| Authors: | Ma Y.E. Benko E. Trinh T. Erickson L.P. Mattord T.J. |
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| Affiliation: | Hughes Aircraft Company, Electron Dynamics Division, Torrance, USA; |
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| Abstract: | Double-drift GaAs IMPATT diodes were designed for V-band frequency operations and fabricated using molecular-beam epitaxy. The diodes were fabricated in two configurations: (a) circular mesa diodes with silver-plated (integrated) heat sinks; (b) pill-type diodes bonded to diamond heat sinks. Both configurations utilised a miniature quartz-ring package. Output power greater than 1 W CW was achieved at V-band frequencies from diodes on diamond heat sinks. The best conversion efficiency was 13.3% at 55.5 GHz with 1 W output power. |
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