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Strain-Modulated Light Emission Properties in a Single InGaN/GaN Multiple-Quantum-Well Microwire-Based Flexible Light-Emitting Diode
Authors:Xingjun Luo  Weidong Song  Fangliang Gao  Jiang Shi  Chuan Cheng  Jiaqi Guo  Longfei He  Qing Liu  Yuqing Yang  Shuti Li  Qibao Wu
Affiliation:1. Institute of Semiconductors, Guangdong Engineering Research Center of Optoelectronic Functional Materials and Devices, South China Normal University, Guangzhou, 510631 China;2. College of Applied Physics and Materials, Wuyi University, 22 Dongcheng Village, Jiangmen, 529020 China;3. School of Intelligent Manufacturing and Equipment, Shenzhen Institute of Information Technology, Shenzhen, 518172 China
Abstract:
Keywords:external strains  InGaN/GaN  light-emitting diodes  microwires  multiple quantum wells  piezo-phototronic effects
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