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Coexistence of Negative and Positive Photoconductivity in Few-Layer PtSe2 Field-Effect Transistors
Authors:Alessandro Grillo  Enver Faella  Aniello Pelella  Filippo Giubileo  Lida Ansari  Farzan Gity  Paul K. Hurley  Niall McEvoy  Antonio Di Bartolomeo
Affiliation:1. Physics Department “E. R. Caianiello”, University of Salerno, via Giovanni Paolo II n. 132, Fisciano, Salerno, 84084 Italy;2. CNR-SPIN Salerno, via Giovanni Paolo II n. 132, Fisciano, Salerno, 84084 Italy;3. Tyndall National Institute, University College Cork, MicroNano Systems Centre, Lee Maltings, Dyke Parade, Cork, T12 R5CP Ireland;4. AMBER and School of Chemistry, Trinity College Dublin, Dublin 2, D02 Ireland
Abstract:Platinum diselenide (PtSe2) field-effect transistors with ultrathin channel regions exhibit p-type electrical conductivity that is sensitive to temperature and environmental pressure. Exposure to a supercontinuum white light source reveals that positive and negative photoconductivity coexists in the same device. The dominance of one type of photoconductivity over the other is controlled by environmental pressure. Indeed, positive photoconductivity observed in high vacuum converts to negative photoconductivity when the pressure is raised. Density functional theory calculations confirm that physisorbed oxygen molecules on the PtSe2 surface act as acceptors. The desorption of oxygen molecules from the surface, caused by light irradiation, leads to decreased carrier concentration in the channel conductivity. The understanding of the charge transfer occurring between the physisorbed oxygen molecules and the PtSe2 film provides an effective route for modulating the density of carriers and the optical properties of the material.
Keywords:charge transfer  field-effect transistors  negative photoconductivity  oxygen adsorption  pressure  PtSe2
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