Making BaZrS3 Chalcogenide Perovskite Thin Films by Molecular Beam Epitaxy |
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Authors: | Ida Sadeghi Kevin Ye Michael Xu Yifei Li James M LeBeau Rafael Jaramillo |
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Affiliation: | Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139 USA |
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Abstract: | The making of BaZrS3 thin films by molecular beam epitaxy (MBE) is demonstrated. BaZrS3 forms in the orthorhombic distorted-perovskite structure with corner-sharing ZrS6 octahedra. The single-step MBE process results in films smooth on the atomic scale, with near-perfect BaZrS3 stoichiometry and an atomically sharp interface with the LaAlO3 substrate. The films grow epitaxially via two competing growth modes: buffered epitaxy, with a self-assembled interface layer that relieves the epitaxial strain, and direct epitaxy, with rotated-cube-on-cube growth that accommodates the large lattice constant mismatch between the oxide and the sulfide perovskites. This work sets the stage for developing chalcogenide perovskites as a family of semiconductor alloys with properties that can be tuned with strain and composition in high-quality epitaxial thin films, as has been long-established for other systems including Si-Ge, III-Vs, and II-VIs. The methods demonstrated here also represent a revival of gas-source chalcogenide MBE. |
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Keywords: | chalcogenide perovskites epitaxy MBE semiconductors thin films |
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