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Electrostatic Control of the Thermoelectric Figure of Merit in Ion-Gated Nanotransistors
Authors:Domenic Prete  Elisabetta Dimaggio  Valeria Demontis  Valentina Zannier  Maria Jesus Rodriguez-Douton  Lorenzo Guazzelli  Fabio Beltram  Lucia Sorba  Giovanni Pennelli  Francesco Rossella
Affiliation:1. NEST, Scuola Normale Superiore and Istituto Nanoscienze-CNR, Piazza San Silvestro 12, Pisa, I-56127 Italy;2. Dipartimento di Ingegneria dell'Informazione, Universitá di Pisa, via Caruso, Pisa, 56126 Italy;3. NEST, Scuola Normale Superiore and Istituto Nanoscienze-CNR, Piazza San Silvestro 12, Pisa, I-56127 Italy

Dipartimento di Farmacia, Universitá di Pisa, via Bonanno 33, Pisa, 56126 Italy;4. Dipartimento di Farmacia, Universitá di Pisa, via Bonanno 33, Pisa, 56126 Italy

Abstract:Semiconductor nanostructures have raised much hope for the implementation of high-performance thermoelectric generators. Indeed, they are expected to make available reduced thermal conductivity without a heavy trade-off on electrical conductivity, a key requirement to optimize the thermoelectric figure of merit. Here, a novel nanodevice architecture is presented in which ionic liquids are employed as thermally-insulating gate dielectrics. These devices allow the field-effect control of electrical transport in suspended semiconducting nanowires in which thermal conductivity can be simultaneously measured using an all-electrical setup. The resulting experimental data on electrical and thermal transport properties taken on individual nanodevices can be combined to extract ZT, guide device optimization and dynamical tuning of the thermoelectric properties.
Keywords:electrolyte gating  semiconductor nanowires  thermoelectrics  thermoelectric figure of merit
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