Strong Interlayer Transition in Few-Layer InSe/PdSe2 van der Waals Heterostructure for Near-Infrared Photodetection |
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| Authors: | Waqas Ahmad Jidong Liu Jizhou Jiang Qiaoyan Hao Di Wu Yuxuan Ke Haibo Gan Vijay Laxmi Zhengbiao Ouyang Fangping Ouyang Zhuo Wang Fei Liu Dianyu Qi Wenjing Zhang |
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| Affiliation: | 1. International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060 P. R. China;2. State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275 China;3. School of Environmental Ecology and Biological Engineering, School of Chemistry and Environmental Engineering, Wuhan Institute of Technology, Wuhan, Hubei, 430205 P. R. China;4. College of Physics and Optoelectronic Engineering, and THz Technical Research Center of Shenzhen University, Key Laboratory of Optoelectronics Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen, 518060 P. R. China;5. Hunan Key Laboratory of Super-microstructure and Ultrafast Process School of Physics and Electronics, Central South University, No. 932, South Lushan Road, Changsha, Hunan Province, 410083 P. R. China |
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| Abstract: | Near infrared (NIR) photodetectors based on 2D materials are widely studied for their potential application in next generation sensing, thermal imaging, and optical communication. Construction of van der Waals (vdWs) heterostructure provides a tremendous degree of freedom to combine and extend the features of 2D materials, opening up new functionalities on photonic and optoelectronic devices. Herein, a type-II InSe/PdSe2 vdWs heterostructure with strong interlayer transition for NIR photodetection is demonstrated. Strong interlayer transition between InSe and PdSe2 is predicted via density functional theory calculation and confirmed by photoluminance spectroscopy and Kelvin probe force microscopy. The heterostructure exhibits highly sensitive photodetection in NIR region up to 1650 nm. The photoresponsivity, detectivity, and external quantum efficiency at this wavelength respectively reaches up to 58.8 A W−1, 1 × 1010 Jones, and 4660%. The results suggest that the construction of vdWs heterostructure with strong interlayer transition is a promising strategy for infrared photodetection, and this work paves the way to developing high-performance optoelectronic devices based on 2D vdWs heterostructures. |
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| Keywords: | 2D materials interlayer transition near infrared photodetectors photoresponsivity van der Waals heterojunction |
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