Ternary-Responsive Field-Effect Transistors and Multilevel Memories Based on Asymmetrically Functionalized Janus Few-Layer WSe2

Hybrids composed of 2D transition metal dichalcogenides with stimuli-responsive molecules are prototypical components for the development of multifunctional field-effect transistors (FETs), whose output currents can be remotely controlled by external inputs. Herein, ternary-responsive FETs based on a few-layer WSe₂ are realized by decorating the two opposite surfaces of the 2D semiconductor with different stimuli-responsive molecules in an asymmetric fashion: the bottom surface is interfaced with a photochromic diarylethene film and the top surface with a ferroelectric poly(vinylidene fluoride–trifluoroethylene) layer. This novel Janus ternary device architecture shows superior functional complexity compared with normal mono-stimuli-responsive FETs. The synergy between the two molecularly induced effects enables the devices to respond orthogonally to an electric field and light irradiation, with an enhanced output current modulation efficiency of 87%. The 9 ferroelectric and 84 photo-generated states ensure 756 current levels in a single device. The over 10 cycles of cyclic endurance and more than 1000 h of retention time confirm the reliability of each state, implementing the demand for high-density non-volatile memories, as well as enriching the diversification in “More than Moore” technologies.