Building Functional Memories and Logic Circuits with 2D Boron Nitride |
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Authors: | Xiao-Tong Liu Jin-Rui Chen Yan Wang Su-Ting Han Ye Zhou |
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Affiliation: | 1. Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060 P. R. China;2. Institute for Advanced Study, Shenzhen University, Shenzhen, 518060 P. R. China |
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Abstract: | The fast development of synthesis routes and preparation technology of 2D materials has motivated a rapid growth in the micro- and nanoelectronic memory devices, which gives rise to the breakthroughs in the semiconductor research area. Hexagon boron nitride (h-BN) with excellent chemical, mechanical, and optical properties has been proven to have potential in overcoming the scaling limit to nanometer, and even sub-nanometer lengths to replace the use of thick and stiff blocking dielectrics in two-terminal or three-terminal devices. The use of atomically thin h-BN or h-BN van der Waals heterostructures (vdWhs) can improve the reliability, capability, and functionality of memory devices. This is an encouraging strategy toward high-density on-chip integrated circuits, which has recently earned considerable interest. While the research in h-BN material properties and characterization is comprehensively verified, specified mechanisms of resistive switching have not been analyzed in-depth. Moreover, recent concern about novel structure design and expanding applications in electronics, optoelectronics, and spintronics has arisen. In this review, recent progress in h-BN memories with volatile or nonvolatile properties is presented, expanding the memories to functional applications, and further challenges of the development of h-BN-based memories and logic circuits are discussed. |
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Keywords: | artificial synapses boron nitride logic circuits magnetotransport resistive switching |
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