Non-Volatile Electrolyte-Gated Transistors Based on Graphdiyne/MoS2 with Robust Stability for Low-Power Neuromorphic Computing and Logic-In-Memory |
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Authors: | Bin-Wei Yao Jiaqiang Li Xu-Dong Chen Mei-Xi Yu Zhi-Cheng Zhang Yuan Li Tong-Bu Lu Jin Zhang |
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Affiliation: | 1. MOE International Joint Laboratory of Materials Microstructure, Institute for New Energy Materials and Low Carbon Technologies, School of Material Science and Engineering, Tianjin University of Technology, Tianjin, 300384 China;2. Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871 China |
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Abstract: | Artificial synapses are the key building blocks for low-power neuromorphic computing that can go beyond the constraints of von Neumann architecture. In comparison with two-terminal memristors and three-terminal transistors with filament-formation and charge-trapping mechanisms, emerging electrolyte-gated transistors (EGTs) have been demonstrated as a promising candidate for neuromorphic applications due to their prominent analog switching performance. Here, a novel graphdiyne (GDY)/MoS2-based EGT is proposed, where an ion-storage layer (GDY) is adopted to EGTs for the first time. Benefitting from this Li-ion-storage layer, the GDY/MoS2-based EGT features a robust stability (variation < 1% for over 2000 cycles), an ultralow energy consumption (50 aJ µm−2), and long retention characteristics (>104 s). In addition, a quasi-linear conductance update with low noise (1.3%), an ultrahigh Gmax/Gmin ratio (103), and an ultralow readout conductance (<10 nS) have been demonstrated by this device, enabling the implementation of the neuromorphic computing with near-ideal accuracies. Moreover, the non-volatile characteristics of the GDY/MoS2-based EGT enable it to demonstrate logic-in-memory functions, which can execute logic processing and store logic results in a single device. These results highlight the potential of the GDY/MoS2-based EGT for next-generation low-power electronics beyond von Neumann architecture. |
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Keywords: | electrolyte-gated transistors graphdiyne Li-ion storage layers logic-in-memory neuromorphic computing |
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