|
|||||
|
|
Electrical Spin Injection into the 2D Electron Gas in AlN/GaN Heterostructures with Ultrathin AlN Tunnel Barrier |
|
| Authors: | Xiaoyue Zhang Ning Tang Liuyun Yang Chi Fang Caihua Wan Xingchen Liu Shixiong Zhang Yunfan Zhang Xinqiang Wang Yuan Lu Weikun Ge Xiufeng Han Bo Shen |
| Affiliation: | 1. State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, 100871 China;2. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190 China;3. State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, 100871 China Frontiers Science Center for Nano-optoelectronics & Collaboration Innovation Center of Quantum Matter, Peking University, Beijing, 100871 China;4. Institut Jean Lamour, Université de Lorraine, CNRS UMR7198, Campus ARTEM, 2 Allée André Guinier, BP 50840, Nancy, 54011 France |
| Abstract: | The spin injection into 2D electron gas (2DEG) in AlN/GaN heterostructures is studied by magneto-transport measurements. An ultrathin AlN layer at the hetero-interface acts as a barrier to form high-quality 2DEG in the triangular quantum well and a tunneling barrier for the spin injection to overcome the conductance mismatch issue. In this study, Hanle signals and inversed Hanle signals are observed, proving that the spin injection is achieved in the 2DEG in the AlN/GaN heterostructure rather than in the interfacial states. The spin-relaxation time in 2DEG at 8 K is found to be as long as 860 ps, which almost keeps constant with bias and decreases with increasing temperature. The spin-relaxation process is illustrated as Rashba spin-orbit coupling dominated D'yakonov Perel’ mechanisms above 8 K. These results show the promising potential of 2DEG in AlN/GaN heterostructures for spin field-effect transistor applications. |
| Keywords: | AlN tunnel barrier AlN/GaN heterostructures spin injection 2D electron gas |