Anomalous Low Thermal Conductivity of Atomically Thin InSe Probed by Scanning Thermal Microscopy |
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Authors: | David Buckley Zakhar R Kudrynskyi Nilanthy Balakrishnan Tom Vincent Debarati Mazumder Eli Castanon Zakhar D Kovalyuk Oleg Kolosov Olga Kazakova Alexander Tzalenchuk Amalia Patanè |
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Affiliation: | 1. National Physical Laboratory, Hampton Road, Teddington, TW11 0LW UK;2. School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD UK;3. National Graphene Institute, The University of Manchester, Manchester, M13 9PL UK;4. Institute for Problems of Materials Science, The National Academy of Sciences of Ukraine, Chernivtsi Branch, Chernivtsi, 58001 Ukraine;5. Department of Physics, Lancaster University, Lancaster, LA1 4YB UK |
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Abstract: | The ability of a material to conduct heat influences many physical phenomena, ranging from thermal management in nanoscale devices to thermoelectrics. Van der Waals 2D materials offer a versatile platform to tailor heat transfer due to their high surface-to-volume ratio and mechanical flexibility. Here, the nanoscale thermal properties of 2D indium selenide (InSe) are studied by scanning thermal microscopy. The high electrical conductivity, broad-band optical absorption, and mechanical flexibility of 2D InSe are accompanied by an anomalous low thermal conductivity (κ). This can be smaller than that of low-κ dielectrics, such as silicon oxide, and it decreases with reducing the lateral size and/or thickness of InSe. The thermal response is probed in free-standing InSe layers as well as layers supported by a substrate, revealing the role of interfacial thermal resistance, phonon scattering, and strain. These thermal properties are critical for future emerging technologies, such as field-effect transistors that require efficient heat dissipation or thermoelectric energy conversion with low-κ, high electron mobility 2D materials, such as InSe. |
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Keywords: | 2D semiconductors InSe phonons scanning thermal microscopy thermal conductivity |
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