Structural, optical and electrical properties of chemically deposited nonstoichiometric copper indium diselenide films |
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| Authors: | R. H. Bari L. A. Patil P. P. Patil |
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| Affiliation: | (1) P.G. Department of Physics, Pratap College, 425 401 Amalner, India;(2) Department of Physical Sciences, North Maharashtra University, 425 001 Jalgaon, India |
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| Abstract: | Thin films of copper indium diselenide (CIS) were prepared by chemical bath deposition technique onto glass substrate at temperature, 60°C. The studies on composition, morphology, optical absorption, electrical conductivity and structure of the films were carried out and discussed. Characterization included X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), energy dispersive X-ray analysis (EDAX) and absorption spectroscopy. The results are discussed and interpreted. |
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| Keywords: | Copper indium diselenide thin films chemical bath deposition non-stoichiometry |
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