| 偏压对HEMT嵌入式微加速度计电学参数的温度特性影响 |
| |
| 引用本文： | 谭振新,薛晨阳,史伟莉,胡全忠,刘俊,张斌珍. 偏压对HEMT嵌入式微加速度计电学参数的温度特性影响[J]. 仪表技术与传感器, 2011, 0(1) |
| |
| 作者姓名： | 谭振新 薛晨阳 史伟莉 胡全忠 刘俊 张斌珍 |
| |
| 作者单位： | 中北大学,仪器科学与动态测试教育部重点实验室,电子测试技术国家重点实验室,山西,太原,030051 |
| |
| 基金项目： | 国家自然基金重点项目资助 |
| |
| 摘 要： | 研究了HEMT嵌入式微加速度计在不同偏压下的温度效应.研究结果表明由于选择的偏压不同,输出电流的温度系数大小不同.其主要原因是漏极电流的温度效应由迁移率的温度系数和阈值电压的温度系数共同决定,两种效应一正一负,根据选择偏压大小,可以调整各自的贡献,确定合适的工作点,从而减小电学参数的温度漂移,甚至可以使某些电学参数的温度系数为零.因此,以HEMT作为微传感器的敏感单元,可以在较宽的温度范围内工作,解决由于温度的影响所带来的测量误差,为温度难以控制的恶劣环境的测试提供一定的依据.
|
| 关 键 词： | 场效应晶体管 温度系数 偏压调制 |
Effect of Voltage Bias of Electrical Properties Based on HEMT-embedded in Accelerometer |
| |
| TAN Zhen-xin,XUE Chen-yang,SHI Wei-li,HU Quan-zhong,LIU Jun,ZHANG Bin-zhen. Effect of Voltage Bias of Electrical Properties Based on HEMT-embedded in Accelerometer[J]. Instrument Technique and Sensor, 2011, 0(1) |
| |
| Authors: | TAN Zhen-xin XUE Chen-yang SHI Wei-li HU Quan-zhong LIU Jun ZHANG Bin-zhen |
| |
| Affiliation: | TAN Zhen-xin,XUE Chen-yang,SHI Wei-li,HU Quan-zhong,LIU Jun,ZHANG Bin-zhen(North University of China,Key Laboratory of Instrumentation Science and Dynamic Measurement,Ministry of Education,National Key Laboratory for Electronic Measurement Technology,Taiyuan 030051,China) |
| |
| Abstract: | The temperature effect of the high electron mobility field effect transistor(HEMT) embedded in accelerometer was studied at different voltage bias.The results indicate that temperature coefficients of output current are different from each other because of the selection of voltage bias.The main reason is that the temperature effect of the drain current is determined by the combination of mobility's temperature coefficient and threshold voltage's temperature coefficient,but the two coefficients are opposite,... |
| |
| Keywords: | field effect transistors temperature coefficient voltage bias modulation |
| 本文献已被 CNKI 万方数据 等数据库收录！ |
|
